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| Preliminary SGA-9089Z Product Description Sirenza Microdevices' SGA-9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 4.0 GHz. The SGA-9089Z is optimized for 3.0V operation. The device provides excellent linearity at a low cost. It can be operated over a wide range of currents depending on the power and linearity requirements. The matte tin finish on Sirenza's lead-free "Z" package is applied using a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. The package body is manufactured with green molding compounds that contain no antimony trioxide or halogenated fire retardants. 24 22 20 OIP3 Gmax High IP3, Medium Power Discrete SiGe Transistor RoHS Compliant Pb & Green Package Typical Gmax, OIP3, P1dB VCE=3.0V, ICE=170mA Product Features 41 38 35 32 29 26 23 18 16 14 12 OIP3 , P1dB (dBm) Gmax (dB) * * * * * * * DC-4 GHz Operation Lead Free, RoHS Compliant & Green Package 15.0 dB Gmax @ 2.44 GHz P1dB = +23.8 dBm @ 2.44 GHz OIP3 = +37.5 dBm @ 2.44 GHz 3.1 dB NF @ 2.44 GHz Low Cost, High Performance, Versatility Applications * * * * Analog and Digital Wireless Systems 3G, Cellular, PCS, RFID Fixed Wireless, Pager Systems PA stage for Medium Power Applications P1dB 10 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 20 Frequency (GHz) Symbol Parameters Units Frequency Min. Typ. Max. GMAX Maximum Available Gain ZS=ZS*, ZL=ZL* Power Gain ZS=ZSOPT, ZL=ZLOPT Output Power at 1dB Compression [2] ZS=ZSOPT, ZL=ZLOPT Output Third Order Intercept Point [2] ZS=ZSOPT, ZL=ZLOPT Noise Figure [2] ZS=ZSOPT, ZL=ZLOPT DC Current Gain Collector - Emitter Breakdown Voltage Thermal Resistance (Junction - lead) Device Operating Voltage (collector- emitter) Device Operating Current (collector - emitter) [1] 100% production tested with Application Circuit dB 880 MHz 1960 MHz 2440 MHz 880 MHz [1] 1960 MHz [2] 2440 MHz [2] 880 MHz 1960 MHz 2440 MHz 880 MHz 1960 MHz 2440 MHz 880 MHz 1960 MHz 2440 MHz 100 5.7 23.2 16.4 15.0 18.0 13.0 11.0 23.7 23.7 23.8 37.4 37.5 37.5 3.2 3.1 3.1 180 6 48 300 G dB P1dB dBm OIP3 dBm NF hFE BVCEO Rth, j-l VCE ICE Test Conditions: dB V C/W V mA [2] Data with Application Circuit 3.8 220 OIP3 Tone Spacing = 1MHz, Pout per tone = 10 dBm VCE = 3.0V, ICE = 170mA Typ. (unless noted otherwise), TL = 25C The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-105051 Rev B Preliminary SGA-9089Z Medium Power SiGe Discrete Transistor Absolute Maximum Ratings Parameter Max Device Current (ICE) Max Base Current (IB) Max Device Voltage (VCE) Max Collector - Base Voltage (VCB) Max Emitter - Base Voltage (VEB) Max. RF Input Power* (See Note) Max. Junction Temp. (TJ) Operating Temp. Range (TL) Max. Storage Temp. *Note: Load condition, ZL = 50 Ohms Absolute Limit 235 mA 2.5 mA 4.5 V 12 V 4.5 V +24 dBm +150C See Graph +150C 1.20 1.00 Total Dissipated Power (W) 0.80 0.60 0.40 0.20 0.00 -40 -10 20 50 80 110 140 Lead Temperature (C) Operational Limit (Tj<130C) Maximum Recommended Operational Dissipated Power Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: TL=TLEAD IDVD < (TJ - TL) / RTH, j-l Reliability & Qualification Information Parameter ESD Rating - Human Body Model (HBM) Moisture Sensitivity Level www.sirenza.com Rating Class 1C MSL 1 This product qualification report can be downloaded at Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Typical performance - Engineering Application Circuits Freq (MHz) 880 2440 Test Conditions: VCE (V) 3 3 VS = 5V ICE (mA) 170 170 P1dB (dBm) 23.7 23.8 IS = 180mA Typ. OIP3 (dBm) 37.4 37.5 Gain (dB) 18.0 11.0 S11 (dB) -18.6 -18.7 S22 (dB) -18.7 -23.9 NF (dB) 3.2 3.1 ZSOPT () 14.8 - j5.6 11.1 - j23.5 TL = 25C ZLOPT () 16.7 - j0.105 16.4 - j14.2 OIP3 Tone Spacing = 1MHz, Pout per tone = 10 dBm Data above represents typical performance of the application circuits. Refer to the application note for additional RF data, PCB layouts, and BOMs for each application circuit. The application note also includes biasing instructions and other key issues to be considered. For the latest application notes please visit our site at www.sirenza.com or call your local sales representative. C B ZLOPT ZSOPT E 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-105051 Rev B Preliminary SGA-9089Z Medium Power SiGe Discrete Transistor 40 35 30 Insertion Gain & Isolation (ICE = 170mA) 0 -5 -10 DCIV Curves 400 350 300 Gain, Gmax (dB) Isolation (dB) 25 20 15 10 5 0 -5 -10 0 Gmax Isolation -15 -20 -25 -30 -35 -40 250 IC (mA) 200 150 100 50 0 0 1 2 3 4 5 Gain -45 -50 6 8 10 2 4 Frequency (GHz) VCE (Volts) IB = 0.0 - 2.8 mA, T=25C Typical Performance - De-embedded S-parameters Note: S-parameters are de-embedded to the device leads with ZS=ZL=50. The device was mounted on Sirenza's recommended evaluation board. De-embedded S-parameters can be downloaded from our website (www.sirenza.com) S11 Vs. Frequency 3.5 GHz 2.44 GHz 1.96 GHz 5 GHz S22 Vs. Frequency 5 GHz 6 GHz 3.5 GHz 2.44 GHz 6 GHz 8 GHz 1.96 GHz .88 GHz .5 GHz .88 GHz .5 GHz .2 GHz 8 GHz 10 GHz .2 GHz .1 GHz .05 GHz .1 GHz 10 GHz .05 GHz 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-105051 Rev B Preliminary SGA-9089Z Medium Power SiGe Discrete Transistor Suggested PCB Pad Layout Dimensions in inches [millimeters] Nominal Package Dimensions Dimensions in inches (millimeters) Refer to package drawing posted at www.sirenza.com for tolerances Package Marking 4 A90Z 2 1 2 Pin Description Pin # Function Description Part Number Ordering Information Part Number SGA-9089Z 303 S. Technology Ct. Broomfield, CO 80021 1 2, 4 3 Reel Size 7" Devices / Reel 1000 RF input / Base Bias. External DC blocking capacitor required Connection to ground. Use via holes to reduce lead GND inductance. Place via holes as close to lead as possible RF Out / Collector bias. External DC blocking capacitor RF OUT required RF IN http://www.sirenza.com EDS-105051 Rev B Phone: (800) SMI-MMIC 4 1 3 3 |
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